10/18/01 ? reduced rfi and emi reduced snubbing extensive characterization of recovery parameters hermetic features description these ultrafast, soft recovery diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode fred v r = 200v i f(av) = 50a t rr = 35ns note: d.c. = 50% rect. wave 1/2 sine wave, 60 hz , p.w. = 8.33 ms HFB50HC20 www.irf.com 1 parameter max. units v r cathode to anode voltage 200 v i f(av) continuous forward current, t c = 87c 50 i fsm single pulse forward current, t c = 25c 450 p d @ t c = 25c maximum power dissipation 167 w t j, t stg operating junction and storage temperature range -55 to +150 c a absolute maximum ratings case style to-258aa anode cathode (isolated base) anode pd - 94308a
2 www.irf.com HFB50HC20 a/s nc a dynamic recovery characteristics @ t j = 25c (unless otherwise specified) a/s nc a parameter min. typ. max. units test conditions t rr reverse recovery time ? ? 35 ns i f = 0.5a,v r = 30v, di f /dt = 300a/s t rr1 reverse recovery time ? 42 ? ns t j = 25c see fig. t rr2 ? 69? t j = 125c 5 i f = 50a i rrm1 peak recovery current ? 4.4 ? t j = 25c see fig. i rrm2 ? 8.7 ? t j = 125c 6 v r = 160v q rr1 reverse recovery charge ? 108 ? t j = 25c see fig. q rr2 ? 314 ? t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ? 390 ? t j = 25c see fig. di (rec)m /dt2 during t b ? 570 ? t j = 125c 8 thermal - mechanical characteristics parameter typ. max. u nits r thjc junction-to-case ? 0.75 wt weight 10.9 ? g c/w see fig. 2 parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 200 ? ? v i r = 100a electrical characteristics @ t j = 25c (unless otherwise specified) l s series inductance ? 8.7 ? nh measured from anode lead to cathode lead, 6 mm ( 0.025 in ) from package c t junction capacitance, see fig. 3 ? ? 360 pf v r = 200v i r reverse leakage current ? ? 10 a v r = v r rated see fig. 2 ? ? 200 a v r = v r rated, t j = 125c v f forward voltage ? ? 1.34 i f = 50a, t j = -55c see fig. 1 ? ? 1.28 i f = 50a, t j = 25c ? ? 1.7 i f = 100a, t j = 25c ? ? 1.69 i f = 100a, t j = 125c v pulse width < 300s, duty cycle < 2% pins 2 and 3 externally tied together note:
www.irf.com 3 HFB50HC20 fig. 4 - maximum thermal impedance z thjc characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - maximum forward voltage drop vs. instantaneous forward current 0 40 80 120 160 200 reverse voltage - v r (v) 100 1000 10000 junction capacitance - c t (pf) t j = 25 c 0.0 0.4 0.8 1.2 1.6 2.0 forward voltage drop - v f (v) 1 10 100 instantaneous forward current - i f (a) tj = -55 c tj = 125 c tj = 25 c 0 40 80 120 160 200 reverse voltage - v r (v) 0.001 0.01 0.1 1 10 100 reverse current - i r (a) 125 c 75 c 25 c 100 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
4 www.irf.com HFB50HC20 fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 5 - typical reverse recovery vs. di f /dt, fig. 6 - typical recovery current vs. di f /dt, 100 1000 di f / dt - ( a / s ) 10 100 1000 q rr - ( nc ) v r = 160v t j = 125 c t j = 25 c i f = 25a i f = 100a i f = 50a 100 1000 di f / dt - ( a / s ) 100 1000 10000 di ( rec )m / dt - ( a / s ) v r = 160v t j = 125 c t j = 25 c i f = 25a i f = 100a i f = 50a 100 1000 di f / dt - ( a / s ) 1 10 100 i rrm - ( a ) v r = 160v t j = 125 c t j = 25 c i f = 25a i f = 100a i f = 50a 100 1000 di f / dt - ( a / s ) 20 40 60 80 100 t rr - ( ns ) v r = 160v t j = 125 c t j = 25 c i f = 25a i f = 100a i f = 50a
www.irf.com 5 HFB50HC20 4. q rr - area under curve defined by t rr and i rrm t rr x i rrm q rr = 2 5. di (rec)m /dt - peak rate of change of current during t b portion of t rr fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f 1. di f /dt - rate of change of current through zero crossing 2. i rrm - peak reverse recovery current 3. trr - reverse recovery time measured from zero crossing point of negative going i f to point where a line passing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/01 case outline and dimensions ? to-258aa pin as s ignme nt s 1 = cathode 2 = anode 3 = anode 23 1 3x 2x 3.55 [.140] 13.97 [.550] 13.46 [.530] b 0.12 [.005] 1.14 [.045] 0.88 [.035] 6.85 [.270] 6.09 [.240] 21.20 [.835] 20.70 [.815] 17.65 [.695] 17.39 [.685] 4.19 [.165] 3.93 [.155] 0.50 [.020] c a b 0.25 [.010] c 37.00 [1.457] 20.40 [1.197] 17.95 [.707] 17.70 [.697] 19.05 [.750] 12.70 [.500] 1.65 [.065] 1.39 [.055] c 5.08 [.200] a not e s : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. all dime ns ions are s hown in millime t e rs [inche s ]. 3. controlling dimens ion: inch. 4. conforms t o jedec out line t o-258aa.
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